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NJW21194G

Manufacturer:

On Semiconductor

Mfr.Part #:

NJW21194G

Datasheet:
Description:

BJTs TO-218-3 Through Hole NPN 200 mW Collector Base Voltage (VCBO):400 V Collector Emitter Voltage (VCEO):250 V Emitter Base Voltage (VEBO):5 V

ParameterValue
Length15.8 mm
Width5 mm
Max Operating Temperature150 °C
Min Operating Temperature-65 °C
Number of Pins3
Height20.1 mm
PackagingTube
Radiation HardeningNo
RoHSCompliant
PolarityNPN
REACH SVHCNo SVHC
Frequency4 MHz
Number of Elements1
Lifecycle StatusProduction (Last Updated: 2 months ago)
Max Power Dissipation200 mW
Power Dissipation200 mW
Max Collector Current16 A
Collector Emitter Breakdown Voltage350 V
Transition Frequency4 MHz
Element ConfigurationSingle
Max Frequency1 MHz
Collector Emitter Voltage (VCEO)250 V
Max Breakdown Voltage250 V
Gain Bandwidth Product4 MHz
Collector Base Voltage (VCBO)400 V
Collector Emitter Saturation Voltage4 V
Emitter Base Voltage (VEBO)5 V
hFE Min20
Schedule B8541210080
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)
Max Cutoff Collector Current100 µA
Transistor TypeNPN

Stock: 216

Distributors
pcbx
Unit Price$3.36470
Ext.Price$3.36470
QtyUnit PriceExt.Price
1$3.36470$3.36470
10$2.85053$28.50530
25$2.66896$66.72400
50$2.49896$124.94800
100$2.33978$233.97800
300$2.19074$657.22200
500$2.05116$1025.58000